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| MPSA05, 06 transistor (npn) features power dissipation p cm : 0.625 w (tamb=25 ) collector current i cm: 0.5 a collector-base voltage v (br)cbo : MPSA05: 60 v mpsa06: 80 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage MPSA05 mpsa06 v (br)cbo ic=100a, i e =0 60 80 v collector-emitter breakdown voltage MPSA05 mpsa06 v (br)ceo i c = 1ma , i b =0 60 80 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 4 v collector cut-off current MPSA05 mpsa06 i cbo v cb =60v, i e =0 v cb =80v, i e =0 0.1 0.1 a collector cut-off current MPSA05 mpsa06 i ceo v ce =50v, i b =0 v ce =60v, i b =0 0.1 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 0.1 a dc current gain h fe v ce =1v, i c = 100ma 100 collector-emitter saturation voltage v ce(sat) i c =100 ma, i b =10ma 0.25 v base-emitter on voltage v be(on) i c = 100 ma, v ce =1v 1.2 v transition frequency f t v ce = 2 v, i c = 10ma f = 100mhz 100 mhz 1 2 3 to-92 1. emiltter 2. base 3. collector MPSA05/06 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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